首页 >MGY20N120D>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara 文件：171.79 Kbytes 页数：6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara 文件：254.76 Kbytes 页数：6 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | |
MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ONSEMI 安森美半导体 | ONSEMI | |
Incorporated into the device is a rugged co?뭦ackaged free wheeling diode with a low forward voltage. 文件：175.53 Kbytes 页数：9 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
IGBT with Monolithic Free Wheeling Diode 文件：182.67 Kbytes 页数：10 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
IGBT 文件：184.12 Kbytes 页数：9 Pages | ONSEMI 安森美半导体 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
1640 |
询价 | ||||
ON/安森美 |
2023+ |
TO-3P |
20000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
onsemi(安森美) |
25+ |
- |
11491 |
样件支持,可原厂排单订货! |
询价 | ||
onsemi(安森美) |
25+ |
- |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
mot |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
ON/安森美 |
23+ |
NA |
12095 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
询价 | ||
ON/安森美 |
22+ |
N/A |
12095 |
现货,原厂原装假一罚十! |
询价 | ||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
普德新星 |
23+ |
MODULE |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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