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NGTB20N120IHSWG

IGBT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGTB20N120IHSWG

包装:散装 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 20A TO247

ONSEMION Semiconductor

安森美半导体安森美半导体公司

20N120C

Generalpurposeinverters

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

BRG20N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FGA20N120FTD

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA20N120FTDTU

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGH20N120A

N-ChannelEnhancementInsulatedGateBipolarTransistor

Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications

HuashanHuashan Electronic Devices Co

华汕电子器件

HGTG20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG20N120CN

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HM20N120AB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM20N120T

H&MNPTIGBTsofferlowerlossesandhigherenergy

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM20N120TB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IHW20N120R

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    NGTB20N120IHSWG

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    散装

  • IGBT 类型:

    沟槽型场截止

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.4V @ 15V,20A

  • 开关能量:

    650µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    -/160ns

  • 测试条件:

    600V,20A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247-3

  • 描述:

    IGBT 1200V 20A TO247

供应商型号品牌批号封装库存备注价格
ON Semiconductor
22+
TO247
9000
原厂渠道,现货配单
询价
ON Semiconductor
23+
TO247
9000
原装正品,支持实单
询价
ON Semiconductor
2022+
TO-247
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ON-安森美
24+25+/26+27+
TO-247-3
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
onsemi
24+
TO-247-3
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
ON Semiconductor
23+
TO247
8000
只做原装现货
询价
ONSemiconductor
19+
-
56800
只卖原装正品!价格超越代理!可开增值税发票!
询价
三年内
1983
纳立只做原装正品13590203865
询价
ON
1809+
SMD
326
就找我吧!--邀您体验愉快问购元件!
询价
onsemi(安森美)
21+
-
3460
航宇科工半导体-央企合格优秀供方
询价
更多NGTB20N120IHSWG供应商 更新时间2024-5-1 10:30:00