Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

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ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

文件：231.25 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Insulated Gate Bipolar Transistor

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

文件：171.79 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

文件：254.76 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Incorporated into the device is a rugged co?뭦ackaged free wheeling diode with a low forward voltage.

文件：175.53 Kbytes 页数：9 Pages

ONSEMI

安森美半导体