isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

文件：275.96 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道 超-超级结MOSFET

• 最低的导通电阻RDS(ON) 和栅极电荷Qg\n• 快速软恢复体二极管\n• dv/dt强度\n• 一流的雪崩功能\n• 国际标准包装;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated

文件：275.96 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 26A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 66mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) · DC-DC Converters

文件：323.71 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：330.28 Kbytes 页数：2 Pages

ISC

无锡固电