Polar HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● International Standard Packages ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Rectifier ● Low QG Applications ● DC-DC Converters ● Battery Chargers ● Switch-Mode and Resonant-Mode Power Supplies

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艾赛斯

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.44Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

Power MOSFET

文件：260.55 Kbytes 页数：5 Pages

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艾赛斯

Power MOSFET

文件：260.55 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特