IXFA4N100Q规格书应用电路供应代理无锡固电-114ic电子网

首页 >IXFA4N100Q>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFA4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFET Power MOSFETs Q-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped	IXYS IXYS Integrated Circuits Division	IXYS
IXFA4N100Q	文件：333.41 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFA4N100Q_11	文件：149.11 Kbytes Page：4 Pages	HiperFET Power MOSFETs Q-Class	IXYS IXYS Integrated Circuits Division	IXYS
4N100-FC	文件：621.96 Kbytes Page：9 Pages	null4.0A,1000VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC4N100-FCprovideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdevice suitableforuseasaloadswitchorinPWMapplications. FEATURES0 RDS(ON)≤6.0Ω@VGS=10V,ID=2.0A LowReverseTransferCapacitance *FastSwitchingCapabi	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
DAM4N100L	文件：257.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
IXFA4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFA4N100P	文件：333.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFA4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFH4N100	文件：94.26 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas	IXYS IXYS Integrated Circuits Division	IXYS
IXFH4N100Q	文件：90.61 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas	IXYS IXYS Integrated Circuits Division	IXYS
IXFH4N100Q	文件：372.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP4N100	文件：295.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100P	文件：332.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100PM	文件：121.78 Kbytes Page：4 Pages	PolarHiperFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100Q	文件：149.11 Kbytes Page：4 Pages	HiperFETPowerMOSFETsQ-Class	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100QM	文件：116.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETQ-Class	IXYS IXYS Integrated Circuits Division	IXYS
IXFR4N100Q	文件：81.23 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside) Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS

12 >>>

详细参数

型号：
IXFA4N100Q
功能描述：
MOSFET 4 Amps 1000V 2.8 Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXFA4N100Q	IXYS	23+	TO-263(IXFA)	30000	晶体管-分立半导体产品-原装正品	询价
深圳市宏捷佳电子科技有限公司	IXFA4N100Q	IXYS	23+	TO-263	12300	全新原装真实库存含13点增值税票!	询价
深圳市科恒伟业电子有限公司	IXFA4N100Q	IXYS/艾赛斯	22+	TO-263	9850	只做原装正品假一赔十!正规渠道订货!	询价
深圳市特顺芯科技有限公司	IXFA4N100Q	IXYS	08+(pbfree)	TO-263	8866		询价
深圳市永贝尔科技有限公司	IXFA4N100Q	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市华来深电子有限公司	IXFA4N100Q	IXYS	23+	TO-263-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
中科航电(深圳)半导体技术有限公司	IXFA4N100Q	IXYS	19+	TO-263-3	56800	D2Pak(2Leads+Tab)	询价
深圳市百视威讯电子科技有限公司	IXFA4N100Q		23+	N/A	85200	正品授权货源可靠	询价
深圳兆威电子有限公司	IXFA4N100Q	IXYS	20+	TO-263-3	90000	全新原装正品/库存充足	询价
深圳市鼎欣微电子有限公司	IXFA4N100Q	IXYS/艾赛斯	21+	TO263	23000	只做正品原装现货	询价

更多IXFA4N100Q供应商更新时间2024-4-28 15:09:00

详细参数

相关规格书

相关库存