IS61C6416-15T资料使用说明书供应价格第13页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61C64B-12T	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61C64B-15J	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61C64B-15T	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61C67	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-15N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-20N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-25N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-L15N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-L20N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-L25N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI

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详细参数

型号：
IS61
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
64K x 16 HIGH-SPEED CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	IS61C6416-15T	ISSI	05+	原厂原装	4951	只做全新原装真实现货供应	询价
深圳市联世界科技有限公司	IS61C6416-15T	ISSI	24+/25+		5	原装正品现货库存价优	询价
深圳市福田区绿盛电子商行	IS61C6416-15T	ISSI?	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市益百分电子有限公司	IS61C6416-15T	ISSI	TSOP44		7	全新原装进口自己库存优势	询价
齐创科技(上海,北京,青岛)有限公司	IS61C6416-15T	ISSI	23+	TSOP44	8000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	IS61C6416-15T	ISSI	24+	TSOP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市凌旭科技有限公司	IS61C6416-15T	ICSI	2016+	TSSOP	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海专毅电子科技有限公司	IS61C6416-15T	ISSI	17+	TSOP44	9988	只做原装进口,自己库存	询价
深圳市壹芯创科技有限公司	IS61C6416-15T	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价
深圳市佳鑫美电子科技有限公司	IS61C6416-15T	ICSI	25+	TSSOP	2800	原装现货!可长期供货!	询价

更多IS61供应商更新时间2026-4-21 15:49:00

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