IS61DDB42M18

36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs

IS61DDB42M18A

DDR-II, Common I/O, Separate I/O SRAM;

·18Mb, 36Mb, and 72Mb densities available\n·x18 and x36 configurations available\n·Burst of 2 or Burst of 4\n·Commercial and Industrial Temperature support\n·333MHz speed for QUAD and DDR-II\n·550MHz speed for QUADP and DDR-IIP\n·ODT and QVLD features for QUADP and DDR-IIP\n·Long-term Support\n

IS61DDB42M18-250M3

36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs

IS61DDB42M18A

Synchronous pipeline read with late write operation

IS61DDB42M18-250M3L

Package：165-LBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 36MBIT PARALLEL 165LFBGA

ISSI, Integrated Silicon Solution Inc

IS61DDB42M18A-250M3L

Package：165-LBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 36MBIT PARALLEL 165LFBGA

ISSI, Integrated Silicon Solution Inc

IS61DDB42M18C-250M3

Package：165-LBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 36MBIT PARALLEL 165LFBGA

ISSI, Integrated Silicon Solution Inc