IS61C67规格书应用电路贸易商矽成半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61C67	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67	文件：300 bytes Page：1 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C67-15N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-20N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-25N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-L15N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-L20N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61C67-L25N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61C67
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
16K X 1 HIGH SPEED CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	IS61C67-20N	ISSI	23+	DIP14	5000	原装正品,假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	IS61C67-15N	ISSI	23+	DIP	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市能元时代电子有限公司	IS61C67-20N	ISSI	23+	198	60972	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市佳鑫美电子科技有限公司	IS61C68-25N	ISSI	25+	DIP20	3629	原装优势!房间现货!欢迎来电!	询价
深圳市锐视安科技有限公司	IS61C88-20N	ISSI	9049	DIP24	679	特价销售欢迎来电!!	询价
深圳市河锋鑫科技有限公司	IS61DDB21M18A300B4L	ISSI Integrated Silicon Soluti	22+	165LFBGA (13x15)	9000	原厂渠道,现货配单	询价
易创佳业科技（深圳）有限公司	IS61DDB21M18A300B4L	ISSI Integrated Silicon Soluti	23+	165LFBGA (13x15)	9000	原装正品，支持实单	询价
深圳市斌腾达科技有限公司	IS61DDB21M18A-300B4L	ISSI, Integrated Silicon Solut	21+	165-TBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61DDB21M18A-300B4L	ISSI, Integrated Silicon Solut	24+	165-LFBGA(13x15)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61DDB21M18A-300B4L	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价

更多IS61C67供应商更新时间2025-10-3 15:35:00

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