IS61C64B-12T数据手册贸易商矽成半导体ISSI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS61C64B-12T	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61C64B-12J	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 页数：9 Pages	ISSI 矽成半导体	ISSI
IS61DDB451236A-250M3L	文件：0 bytes Page：0 Pages	ISSI(美国芯成) FBGA-165(15x17)	ISSI(美国芯成) 上传：深圳市宇创芯科技有限公司	ISSI(美国芯成)
IS61DDP2B21M36A-400M3L	文件：0 bytes Page：0 Pages	ISSI(美国芯成) FBGA-165(15x17)	ISSI(美国芯成) 上传：深圳市宇创芯科技有限公司	ISSI(美国芯成)
IS61DDP2B22M36A-400M3L	文件：0 bytes Page：0 Pages	ISSI(美国芯成) FBGA-165(15x17)	ISSI(美国芯成) 上传：深圳市宇创芯科技有限公司	ISSI(美国芯成)

更多IS61C64B-12T供应商更新时间2025-10-4 14:10:00