128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

文件：102.48 Kbytes 页数：8 Pages

ISSI

矽成半导体