128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

文件：107.06 Kbytes 页数：17 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati

文件：589.57 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

文件：883.2 Kbytes 页数：15 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

文件：107.06 Kbytes 页数：17 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

文件：883.2 Kbytes 页数：15 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

文件：107.06 Kbytes 页数：17 Pages

ISSI

矽成半导体

128K x 8 HIGH-SPEED CMOS STATIC RAM

文件：107.06 Kbytes 页数：17 Pages

ISSI

矽成半导体