128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

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ISSI

矽成半导体

静态随机存储器(SRAM)

Integrated Silicon Solution

Package：48-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc