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IS62WV51216BLL-55TLI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-55TLI

Package:44-TSOP(0.400",10.16mm 宽);包装:管件 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS62WV51216BLL-55TLI-TR

Package:44-TSOP(0.400",10.16mm 宽);包装:托盘 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS62WV51216BLL-55BI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-55BLI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-55TI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

产品属性

  • 产品编号:

    IS62WV51216BLL-55TLI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 异步

  • 存储容量:

    8Mb(512K x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    55ns

  • 电压 - 供电:

    2.5V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    44-TSOP(0.400",10.16mm 宽)

  • 供应商器件封装:

    44-TSOP II

  • 描述:

    IC SRAM 8MBIT PARALLEL 44TSOP II

供应商型号品牌批号封装库存备注价格
ISSI
21+
TSOP44
16200
询价
ISSI
24+
TSOP44
27000
绝对全新原装现货特价销售,欢迎来电查询
询价
ISSI/芯成
25+
TSOP44
12496
ISSI原装正品IS62WV51216BLL-55TLI即刻询购立享优惠#长期有货
询价
ISSI/芯成
25+
TSOP44
10000
就找我吧!--邀您体验愉快问购元件!
询价
ISSI
1619
TSOP44
1000
原装正品金芯阳科技自家库存欢迎询价QQ:2698954303
询价
ISSI
23+
TSOP44
5000
原装正品,假一罚十
询价
ISSI
21
TSOP-44
2000
全新原装公司现货
询价
ISSI
24+
TSOP
50000
只做原厂渠道 可追溯货源
询价
ISSI
23+
TSOP44
3000
正规渠道,只有原装!
询价
ISSI
100000
代理渠道/只做原装/可含税
询价
更多IS62WV51216BLL-55TLI供应商 更新时间2022-7-14 15:13:00