IS62WV51216BLL-55BI数据表ic资料供应代理-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS62WV51216BLL-55BI	文件：129.24 Kbytes Page：16 Pages	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p 文件：129.24 Kbytes 页数：16 Pages	ISSI 矽成半导体	ISSI
IS62WV51216BLL-55BI	文件：100 bytes Page：1 Pages	Package：48-TFBGA；包装：托盘类别：集成电路（IC）存储器描述：IC SRAM 8MBIT PARALLEL 48MINIBGA	ISSI, Integrated Silicon Solution Inc	ISSI, Integrated Silicon Solution Inc
IS62WV51216BLL-55BI-TR	文件：100 bytes Page：1 Pages	Package：48-TFBGA；包装：托盘类别：集成电路（IC）存储器描述：IC SRAM 8MBIT PARALLEL 48MINIBGA	ISSI, Integrated Silicon Solution Inc	ISSI, Integrated Silicon Solution Inc
IS62WV51216BLL-55BLI	文件：129.24 Kbytes Page：16 Pages	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p 文件：129.24 Kbytes 页数：16 Pages	ISSI 矽成半导体	ISSI
IS62WV51216BLL-55TI	文件：129.24 Kbytes Page：16 Pages	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p 文件：129.24 Kbytes 页数：16 Pages	ISSI 矽成半导体	ISSI
IS62WV51216BLL-55TLI	文件：129.24 Kbytes Page：16 Pages	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p 文件：129.24 Kbytes 页数：16 Pages	ISSI 矽成半导体	ISSI

产品属性

产品编号：
IS62WV51216BLL-55BI
制造商：
ISSI, Integrated Silicon Solution Inc
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 异步
存储容量：
8Mb（512K x 16）
存储器接口：
并联
写周期时间 - 字，页：
55ns
电压 - 供电：
2.5V ~ 3.6V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装型
封装/外壳：
48-TFBGA
供应商器件封装：
48-TFBGA（6x8）
描述：
IC SRAM 8MBIT PARALLEL 48MINIBGA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市羿芯诚电子有限公司	IS62WV51216BLL-55BI	ISSI	20+	BGA	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
深圳市汇莱威科技有限公司	IS62WV51216BLL-55BI	ISSI	24+	BGA	23000	免费送样原盒原包现货一手渠道联系	询价
深圳市毅创腾电子科技有限公司	IS62WV51216BLL-55BI	ISSI	23+	48-迷你型BGA(6x8)	1389	专业分销产品!原装正品!价格优势!	询价
深圳诚思涵科技有限公司	IS62WV51216BLL-55BI	ISSI	16+	BGA	2500	进口原装现货/价格优势!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS62WV51216BLL-55BI	ISSI	25+	QFN	18000	原厂直接发货进口原装	询价
齐创科技(上海,北京,青岛)有限公司	IS62WV51216BLL-55BI	ISSI	23+	标准	5000	原装正品,假一罚十	询价
千层芯半导体(深圳)有限公司	IS62WV51216BLL-55BI	ISSI	24+	SMD	15600	静态随机存取存储器8Mb512Kx1655nsAsync静态随机存取	询价
深圳市振宏微科技有限公司	IS62WV51216BLL-55BI	ISSI	23+	BGAQFP	8659	原装公司现货!原装正品价格优势.	询价
深圳市华斯顿科技有限公司	IS62WV51216BLL-55BI	ISSI	25+23+	BGA	38346	绝对原装正品全新进口深圳现货	询价
深圳市斌腾达科技有限公司	IS62WV51216BLL-55BI	ISSI, Integrated Silicon Solut	21+	60-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价

更多IS62WV51216BLL-55BI供应商更新时间2025-10-4 10:18:00

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