256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：3.49709 Mbytes 页数：87 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：4.53213 Mbytes 页数：87 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：4.53213 Mbytes 页数：87 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：3.49709 Mbytes 页数：87 Pages

ISSI

矽成半导体

Programmable CAS Latency

文件：3.82435 Mbytes 页数：88 Pages

ISSI

矽成半导体

1.5V DDR3 SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support

ISSI

矽成半导体

1.35V DDR3L SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support\n

ISSI

矽成半导体

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc