IS43TR16640C规格书应用电路供应商报价ISSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS43TR16640C	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640C-107MBL	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640C-107MBLI	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640C-125JBL	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640C-125JBLI	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640CL	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640CL-107MBL	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640CL-107MBLI	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640CL-125JBL	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI
IS43TR16640CL-125JBLI	文件：4.29092 Mbytes Page：89 Pages	128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture 文件：4.29092 Mbytes 页数：89 Pages	ISSI 矽成半导体	ISSI

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	IS43TR16640C	ISSI	23+	BGA	4500	ISSI存储芯片在售	询价
艾睿（深圳）半导体有限公司	IS43TR16640C-125JBLI	ISSI(美国芯成)	2447	TWBGA-96(9x13)	315000	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市冠亿通科技有限公司	IS43TR16640C-125JBLI-TR	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	IS43TR16640C-125JBLI	ISSI(美国芯成)	2021+	TWBGA-96(9x13)	2275		询价
深圳市正纳电子有限公司	IS43TR16640CL-107MBLI	ISSI, Integrated Silicon Solut	/ROHS.original	96-TWBGA(9x13)	570	﹤原装元器件﹥现货特价/供应元器件代理经销。欢迎咨	询价
深圳市祥瑞智科技有限公司	IS43TR16640C-125JBLI	ISSI	25+	FBGA96	2500	原厂原装,价格优势	询价
贸泽芯城（深圳）电子科技有限公司	IS43TR16640CL-107MBLI	ISSI	23+	BGA-96	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市威雅利发展有限公司	IS43TR16640CL-107MBLI	ISSI	21+	BGA	5077	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛特兴科技有限公司	IS43TR16640C-125JBLI-TR	ISSI	23+	BGA96	10800	正规渠道,只有原装!	询价
深圳市瑞卓芯科技有限公司	IS43TR16640CL-125JBLI	ISSI/芯成	22+	BGA-96	18000	原装正品	询价

更多IS43TR16640C供应商更新时间2025-11-29 17:04:00

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