1.5V DDR3 SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support

ISSI

矽成半导体

1.35V DDR3L SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support\n

ISSI

矽成半导体

Package：96-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc