256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：3.49709 Mbytes 页数：87 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

文件：3.49709 Mbytes 页数：87 Pages

ISSI

矽成半导体

ISSI
TSOP56

ISSI

矽成半导体

上传：深圳市星佑电子有限公司

ISSI
BGA

ISSI

矽成半导体

上传：深圳市星佑电子有限公司

ISSI
TSOP54

ISSI

矽成半导体

上传：深圳市富源半导体有限公司