Programmable CAS Latency

文件：3.89952 Mbytes 页数：88 Pages

ISSI

矽成半导体

Programmable CAS Latency

文件：3.89952 Mbytes 页数：88 Pages

ISSI

矽成半导体

1.5V DDR3 SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support

ISSI

矽成半导体

1.35V DDR3L SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support\n

ISSI

矽成半导体

Package：96-TFBGA；包装：散装 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc