3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体