1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

文件：2.37765 Mbytes 页数：67 Pages

ISSI

矽成半导体

1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

文件：2.37765 Mbytes 页数：67 Pages

ISSI

矽成半导体

1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

文件：2.37765 Mbytes 页数：67 Pages

ISSI

矽成半导体

1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

文件：2.37765 Mbytes 页数：67 Pages

ISSI

矽成半导体

1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

文件：2.37765 Mbytes 页数：67 Pages

ISSI

矽成半导体