Silicom 40G/10G Intelligent Bypass Switch

文件：494.63 Kbytes 页数：11 Pages

SILICOM

Silicom Ltd.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 455mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

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ISC

无锡固电

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pulse