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IS41C16100-50T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

文件:123.63 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS41C16100-50T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes 页数:23 Pages

ISSI

矽成半导体

IS41C16100-50TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

文件:123.63 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS41C16100-50TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes 页数:23 Pages

ISSI

矽成半导体

IS41C16100-50TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes 页数:23 Pages

ISSI

矽成半导体

IS41C16100-50TLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes 页数:23 Pages

ISSI

矽成半导体

详细参数

  • 型号:

    IS41C16100-50T

  • 制造商:

    ISSI

  • 制造商全称:

    Integrated Silicon Solution, Inc

  • 功能描述:

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商型号品牌批号封装库存备注价格
ISSI
24+
TSOP
1200
询价
ISSI
25+
TSOP-50
4650
询价
ISSI
10+
TSOP
9000
原装现货价格有优势量多可发货
询价
ISSI
2015+
DIP/SOP
19889
一级代理原装现货,特价热卖!
询价
ISSI
25+
TSOP
45
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISSI
25+
QFN
18000
原厂直接发货进口原装
询价
ISSI
22+
TSOP50
5000
全新原装现货!价格优惠!可长期
询价
ISSI
23+
TSSOP
8650
受权代理!全新原装现货特价热卖!
询价
ISSI
24+
SMD
35200
一级代理分销/放心采购
询价
ISSI
23+
TSSOP
3500
原装正品假一罚百!可开增票!
询价
更多IS41C16100-50T供应商 更新时间2025-10-4 16:30:00