IS41C16100数据表ic资料供应代理矽成半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41C16100	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100	文件：169.53 Kbytes Page：23 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes 页数：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100	文件：300 bytes Page：1 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION\nThe ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns • TTL compatible inputs and outputs; tristate I/O\n• Refresh Interval:\n— Auto refresh Mode: 1,024 cycles /16 ms\n— RAS-Only, CAS-before-RAS (CBR), and Hidden\n— Self refresh Mode - 1,024 cycles / 128ms\n• JEDEC standard pinout\n• Single power supply:\n— 5V ± 10% (IS41C16100)\n— 3.3V ± 10% (;	ISSI 矽成半导体	ISSI
IS41C16100-50K	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50KI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50T	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50TI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60K	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60KI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60T	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS41C16100
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IS41C16100S-50T		24+	SOP	7003		询价
深圳市星佑电子有限公司	IS41C16100-50K	INTEGRATEDSI	05+	原厂原装	4230	只做全新原装真实现货供应	询价
深圳市毅创腾电子科技有限公司	IS41C16100-50KL	ISSI		SOJ	8000	正品原装--自家现货-实单可谈	询价
深圳市益百分电子有限公司	IS41C16100-50T	ISSI	10+	TSOP	9000	原装现货价格有优势量多可发货	询价
齐创科技(上海,北京,青岛)有限公司	IS41C16100S-50K	ICSI	23+	SOJ	5000	原装正品,假一罚十	询价
深圳市正迈科技有限公司	IS41C16100-50KL	ISSI	23+	SOP	20000	原厂授权代理分销现货只做原装正迈科技样品支持现货	询价
深圳市豪迈兴电子有限公司	IS41C16100S-50K	ISSI	24+	SOJ	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市卓越微芯电子有限公司	IS41C16100C-50TLI	ISSI	25+	TSOP44	20	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市弘为电子有限公司	IS41C16100S-50K	ICSI	24+	SOJ/42	1068	原装现货假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS41C16100-60K	ISSI	25+	QFN	18000	原厂直接发货进口原装	询价

更多IS41C16100供应商更新时间2025-10-6 14:30:00

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