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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41C16100S	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45KI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45T	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-45TI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-50K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-50KI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-50T	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-50TI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16100S-60K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI

详细参数

型号：
IS41C16100S
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿（深圳）半导体有限公司	IS41C16100S	ISSI	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市一线半导体有限公司	IS41C16100S-50T		24+	SOP	7003		询价
齐创科技(上海,北京,青岛)有限公司	IS41C16100S-50K	ICSI	23+	SOJ	5000	原装正品,假一罚十	询价
深圳市卓越微芯电子有限公司	IS41C16100S-50K	ICSI	25+	PLCC	12775	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市豪迈兴电子有限公司	IS41C16100S-50K	ISSI	24+	SOJ	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS41C16100S-50K	ISSI	25+	SOT	18000	原厂直接发货进口原装	询价
深圳市弘为电子有限公司	IS41C16100S-50K	ICSI	24+	SOJ/42	1068	原装现货假一罚十	询价
深圳市福田区绿盛电子商行	IS41C16100S-60TI	ISSI	2015+	DIP/SMD	19889	一级代理原装现货,特价热卖!	询价
上海鑫科润电子科技有限公司	IS41C16100S-50K	ICSI	01+	SOJ/42	29	原装现货海量库存欢迎咨询	询价
深圳市壹芯创科技有限公司	IS41C16100S-50T	ISSI	22+	TSOP	2000	原装正品现货	询价

更多IS41C16100S供应商更新时间2026-1-23 11:01:00

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