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IS41C16100S-60K中文资料PDF规格书
IS41C16100S-60K规格书详情
DESCRIPTION
The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems.
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
Refresh Mode: 1,024 cycles /16 ms
RAS-Only, CAS-before-RAS (CBR), and Hidden
Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
5V ± 10 (IS41C16100S)
3.3V ± 10 (IS41LV16100S)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C
产品属性
- 型号:
IS41C16100S-60K
- 制造商:
ICSI
- 制造商全称:
Integrated Circuit Solution Inc
- 功能描述:
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
2015+ |
DIP/SMD |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
ICSI |
22+ |
SOJ-42 |
4650 |
询价 | |||
ISSI |
23+ |
SOJ |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ISSI |
NEW+ |
SOJ |
5950 |
询价 | |||
ISS |
22+ |
SOJ-42 |
6521 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
ISSI |
20+/21+ |
SOJ |
8000 |
全新原装现货优势产品 |
询价 | ||
ISSI |
2020+ |
TSOP |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
2015 |
21+ |
ISSI |
12000 |
原装现货。假一赔十 |
询价 | ||
ISSI/芯成 |
22+ |
SOJ |
15330 |
原装正品 |
询价 | ||
ISSI |
2023+ |
SOJ |
50000 |
原装现货 |
询价 |