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IS35ML01G084-BLE

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件:2.14405 Mbytes 页数:55 Pages

ISSI

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IS35ML01G084-BLI

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件:2.14405 Mbytes 页数:55 Pages

ISSI

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IS35ML01G084-TLE

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件:2.14405 Mbytes 页数:55 Pages

ISSI

矽成半导体

IS35ML01G084-TLI

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件:2.14405 Mbytes 页数:55 Pages

ISSI

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供应商型号品牌批号封装库存备注价格
ISSI
23+
TSOP
4704
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
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ISSI
23+
BGA
4500
ISSI存储芯片在售
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ISSI
21+
原厂封装
1975
询价
ISSI
2223+
26800
只做原装正品假一赔十为客户做到零风险
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ISSI
24+
66500
只做全新原装进口现货
询价
ISSI
25+
TSOP48
4000
原厂原装,价格优势
询价
ISSI
24+
N/A
480
原装原装原装
询价
ISSI
原厂封装
9800
原装进口公司现货假一赔百
询价
ISSI
24+
MSOP8
756
询价
ISSI
23+
MSOP8
5000
原装正品,假一罚十
询价
更多IS35ML01G084-BLE供应商 更新时间2025-11-17 14:45:00