3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -

文件：1.43814 Mbytes 页数：67 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -

文件：1.43814 Mbytes 页数：67 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -

文件：1.43814 Mbytes 页数：67 Pages

ISSI

矽成半导体

SOJ

ISSI

矽成半导体

上传：深圳市壹芯创科技有限公司

TSOP

ISSI

矽成半导体

上传：深圳市勤思达科技有限公司