丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description The IRLML0030 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52747 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

Lower switching losses

Features VDS (V) = 30V RDS(ON)

文件：444.86 Kbytes 页数：8 Pages

UMW

友台半导体

MOSFET

Features VDS (V) = 30V RDS(ON)

文件：379.02 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

30V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard surface-mount package\n• Capable of being wave-soldered;

Infineon

英飞凌

丝印：IBR75；Package：SOT-23；MOSFET

Features VDS (V) = 30V RDS(ON)

文件：379.02 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IBR75；Package：SOT-23；Lower switching losses

Features VDS (V) = 30V RDS(ON)

文件：444.86 Kbytes 页数：8 Pages

UMW

友台半导体

HEXFET Power MOSFET

Features and Benefits Features Low RDS(on) ( ≤ 27mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Benefits Lower switching losses Multi-ven

文件：230.15 Kbytes 页数：10 Pages

IRF

丝印：A49T；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Vos=30V,lo=58A Rosow

文件：2.12896 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

HEXFETPower MOSFET

文件：197 Kbytes 页数：10 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：197 Kbytes 页数：10 Pages

IRF