IRLML0030

Marking：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description TheIRLML0030usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=30VID=4.2A RDS(ON)

IRLML0030

Lower switching losses

Features VDS(V)=30V RDS(ON)

IRLML0030

MOSFET

Features VDS(V)=30V RDS(ON)

IRLML0030TR

Marking：IBR75；Package：SOT-23；Lower switching losses

Features VDS(V)=30V RDS(ON)

IRLML0030TR

Marking：IBR75；Package：SOT-23；MOSFET

Features VDS(V)=30V RDS(ON)

IRLML0030TRPBF

HEXFET Power MOSFET

FeaturesandBenefits Features LowRDS(on)(≤27mΩ) Industry-standardpinout CompatiblewithexistingSurfaceMountTechniques RoHScompliantcontainingnolead,nobromideandnohalogen MSL1,Industrialqualification Benefits Lowerswitchinglosses Multi-ven

IRLML0030TRPBF-G

Marking：A49T；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Vos=30V,lo=58A Rosow

IRLML0030PBF

HEXFETPower MOSFET

IRLML0030PBF

ADVANCED PROCESS TECHNOLOGY

IRLML0030PBF_15

ADVANCED PROCESS TECHNOLOGY