丝印：IBR75；Package：SOT-23；Lower switching losses

Features VDS (V) = 30V RDS(ON)

文件：444.86 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IBR75；Package：SOT-23；MOSFET

Features VDS (V) = 30V RDS(ON)

文件：379.02 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Features and Benefits Features Low RDS(on) ( ≤ 27mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Benefits Lower switching losses Multi-ven

文件：230.15 Kbytes 页数：10 Pages

IRF

丝印：A49T；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Vos=30V,lo=58A Rosow

文件：2.12896 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

HEXFETPower MOSFET

文件：197 Kbytes 页数：10 Pages

IRF

HEXFETPower MOSFET

文件：282.42 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-Channel 30-V (D-S) MOSFET

文件：1.07174 Mbytes 页数：9 Pages

VBSEMI

微碧半导体