Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

文件：1.48363 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 is a surface-mount power package capable of a

文件：502 Kbytes 页数：9 Pages

IRF

Surface Mount

文件：1.47104 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

文件：1.48363 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

文件：1.48363 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 is a surface-mount power package capable of a

文件：1.39136 Mbytes 页数：9 Pages

IRF

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

文件：1.48363 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

Vishay

威世

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

Infineon

英飞凌

Power MOSFET

Vishay

威世