Advenced Power MOSFET

BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)

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isc N-Channel MOSFET Transistor

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Advenced Power MOSFET

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VishayVishay Siliconix

威世威世科技公司

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FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

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威世威世科技公司

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IRF