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IRL2203NSTRLPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:295.79 Kbytes 页数:10 Pages

IRF

IRL2203S

Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:173.01 Kbytes 页数:9 Pages

IRF

IRL2505

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505L

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505LPBF

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:288.6 Kbytes 页数:10 Pages

IRF

IRL2505S

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505S/L

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505SPBF

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:288.6 Kbytes 页数:10 Pages

IRF

IRL2505SSLASHL

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505STRLPBF

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:288.6 Kbytes 页数:10 Pages

IRF

技术参数

  • Package :

    TO-220

  • VDS max:

    30.0V

  • RDS (on)(@10V) max:

    7.0mΩ

  • RDS (on) max:

    7.0mΩ

  • RDS (on)(@4.5V) max:

    10.0mΩ

  • Polarity :

    N

  • ID (@ TC=100°C) max:

    71.0A

  • ID  max:

    71.0A

  • ID (@ TC=25°C) max:

    100.0A

  • Ptot max:

    130.0W

  • QG :

    40.0nC 

  • Mounting :

    THT

  • RthJC max:

    1.2K/W

  • Tj max:

    175.0°C

  • VGS max:

    16.0V

  • Qgd :

    22.0nC 

供应商型号品牌批号封装库存备注价格
9000
原装现货价格有优势量多可发货
询价
IR
13+
TO-220
7258
原装分销
询价
IR
05+
TO-220
5000
全新原装 绝对有货
询价
IR
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
IR
24+
D2-Pak
8866
询价
IR
24+
原厂封装
2850
原装现货假一罚十
询价
IR
24+/25+
304
原装正品现货库存价优
询价
IRA
23+
SOT-23
5000
原装正品,假一罚十
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR
25+
TO-220
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多IRL2供应商 更新时间2025-10-9 14:24:00