IRL2说明书PDF资料市场行情飞思卡尔NICE-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRL2	文件：170.44 Kbytes Page：3 Pages	IR Carrier Frequency Range: 15kHz - 460kHz, or no carrier 文件：170.44 Kbytes 页数：3 Pages	NICE	NICE
IRL2203	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 页数：8 Pages	IRF	IRF
IRL2203N	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 页数：8 Pages	IRF	IRF
IRL2203NL	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 页数：10 Pages	IRF	IRF
IRL2203NLPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 页数：11 Pages	IRF	IRF
IRL2203NLPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 页数：10 Pages	IRF	IRF
IRL2203NPBF	文件：183.07 Kbytes Page：8 Pages	HEXFET짰 Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：183.07 Kbytes 页数：8 Pages	IRF	IRF
IRL2203NS	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 页数：10 Pages	IRF	IRF
IRL2203NSPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 页数：10 Pages	IRF	IRF
IRL2203NSPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 页数：11 Pages	IRF	IRF

技术参数

Package ：
TO-220
VDS max：
30.0V
RDS (on)(@10V) max：
7.0mΩ
RDS (on) max：
7.0mΩ
RDS (on)(@4.5V) max：
10.0mΩ
Polarity ：
N
ID (@ TC=100°C) max：
71.0A
ID max：
71.0A
ID (@ TC=25°C) max：
100.0A
Ptot max：
130.0W
QG ：
40.0nC
Mounting ：
THT
RthJC max：
1.2K/W
Tj max：
175.0°C
VGS max：
16.0V
Qgd ：
22.0nC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	IRL2910				9000	原装现货价格有优势量多可发货	询价
深圳市粤科源兴科技有限公司	IRL2203N	IR	13+	TO-220	7258	原装分销	询价
深圳市星佑电子有限公司	IRL2203	IR	05+	TO-220	5000	全新原装绝对有货	询价
深圳市勤思达科技有限公司	IRL2703S	IR	12+	TO-263	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市一线半导体有限公司	IRL2505S	IR	24+	D2-Pak	8866		询价
深圳市弘为电子有限公司	IRL2910SPBF	IR	24+	原厂封装	2850	原装现货假一罚十	询价
深圳市联世界科技有限公司	IRL2703S	IR	24+/25+		304	原装正品现货库存价优	询价
齐创科技(上海,北京,青岛)有限公司	IRL228M	IRA	23+	SOT-23	5000	原装正品,假一罚十	询价
深圳市欧立现代科技有限公司	IRL2703S	ir	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市卓越微芯电子有限公司	IRL2203N	IR	25+	TO-220	10	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多IRL2供应商更新时间2025-10-4 9:31:00

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