IRGSL10B60KD中文资料下载原装现货英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRGSL10B60KD	文件：324.07 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien 文件：324.07 Kbytes 页数：15 Pages	IRF	IRF
IRGSL10B60KDPBF	文件：365.94 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru 文件：365.94 Kbytes 页数：15 Pages	IRF	IRF
IRGSL10B60KD	文件：300 bytes Page：1 Pages	600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package	Infineon 英飞凌	Infineon
IRGSL10B60KDPBF	文件：100 bytes Page：1 Pages	Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：卷带（TR）类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT NPT 600V 22A TO262	Infineon 英飞凌	Infineon

更多IRGSL10B60KD供应商更新时间2025-10-4 14:30:00