| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(ON)TrenchIGBTTechnology •LowSwitchingLosses •MaximumJunctionTemperature175°C •5μSshortcircuitSOA •SquareRBSOA •100ofThePartsTestedforILM •PositiveVCE(ON)TemperatureCoefficient •TightParameterDistribution •LeadFreePackage Benefits • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(ON)TrenchIGBTTechnology •LowSwitchingLosses •MaximumJunctionTemperature175°C •5μSshortcircuitSOA •SquareRBSOA •100ofThePartsTestedforILM •PositiveVCE(ON)TemperatureCoefficient •TightParameterDistribution •LeadFreePackage Benefits • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Features •LowVCE(ON)TrenchIGBTTechnology •LowSwitchingLosses •MaximumJunctionTemperature175°C •5μSshortcircuitSOA •SquareRBSOA •100ofThePartsTestedforILM •PositiveVCE(ON)TemperatureCoefficient •TightParameterDistribution •LeadFreePackage Benefits • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 600V 76A TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
包装：散装 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 76A 268W TO247 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 76A 268W TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHVOLTAGETEMPERATURECOMPENSATEDZENERDIODES FEATURES •ZENERVOLTAGE12.4Vto200V •TEMPERATURECOEFFICIENTRANGE:0.005/°Cto0.002/°C | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEDIODES FEATURES •ZENERVOLTAGE12.4Vto200V •TEMPERATURECOEFFICIENTRANGE:0.005/°Cto0.002/°C | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
12.4THRU200VOLTNOMINALZENERVOLTAGES5 •12.4THRU200VOLTNOMINALZENERVOLTAGES+5 •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •EFFECTIVETEMPERATURECOEFFICIENTSOF0.005/°CAND0.002/°C •HERMETICALLYSEALED,METALLURGICALLYBONDED,DOUBLEPLUGSUBASSEMBLIESENCAPSULATEDINAPLASTICCASE | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
Hexinverter DESCRIPTION TheHEF4069UBisageneralpurposehexinverter.Eachofthesixinvertersisasinglestage. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
HexInverter TheMC14069UBhexinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Theseinvertersfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Eachofthesixinvertersisasinglestagetominimizepropagat | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HEXINVERTER DESCRIPTION TheHCC4069UB(extendedtemperaturerange)andHCF4069UB(intermediatetemperaturerange)aremonolithicintegratedcircuit,availablein14-leaddualin-lineplasticorceramicpackageandplasticmicropackage. TheHCC/HCF4069UBconsistsofsixCOS/MOSinvertercircuits.Thisde | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
CMOSHEXIVVERTER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Hexinverter Description BU4001BseriesICsare2-inputpositivelogicNORgates,eachwithfourbuilt-incircuits.Abufferachievedbyaninverteraddedatthegateoutputimprovestheinput/outputpropagationcharacteristicsandminimizesvariationinthepropagationtimecausedbyanincreaseintheloa | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
InverterCircuits GeneralDescription TheCD4069UBconsistsofsixinvertercircuitsandismanufacturedusingcomplementaryMOS(CMOS)toachievewidepowersupplyoperatingrange,lowpowerconsumption,highnoiseimmunity,andsymmetriccontrolledriseandfalltimes. Thisdeviceisintendedforallgeneralpu | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HexInverter HexInverter | HitachiHitachi, Ltd. 日立公司 | Hitachi |
产品属性
- 产品编号：
IRGP4069DPBF
- 制造商：
Infineon Technologies
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- IGBT 类型：
沟道
- 不同 Vge、Ic 时 Vce(on)（最大值）：
1.85V @ 15V，35A
- 开关能量：
390µJ（开），632µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
46ns/105ns
- 测试条件：
400V，35A，10 欧姆，15V
- 工作温度：
-55°C ~ 175°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247AC
- 描述：
IGBT TRENCH 600V 76A TO247AC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/IR |
14+ |
TO-247-3 |
200 |
询价 | |||
IR |
21+ |
TO247-3 |
1516 |
十年信誉,只做原装,有挂就有现货! |
询价 | ||
INFINEON/IR |
14+ |
200 |
TO-247-3 |
询价 | |||
INFINEON/IR |
23+ |
TO-247-3 |
200 |
原装现货支持送检 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-247 |
1489 |
专营INFINEON/英飞凌全新原装进口正品 |
询价 | ||
英飞凌 |
新批次 |
N/A |
1500 |
询价 | |||
IR |
15+ |
TO-247 |
3680 |
询价 | |||
Infineon |
18+ |
NA |
3318 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
InfineonTechnologies |
2019+ |
TO-247AC |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
INFINEON |
23+ |
NA |
785 |
原装现货,专业配单专家 |
询价 |
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