INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package Benefits •

文件：432.4 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package Benefits •

文件：432.4 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：301.33 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：301.33 Kbytes 页数：11 Pages

IRF

600V Low VCEon Trench Co-Pack IGBT with Ultra-Fast Soft Recovery Diode in a TO-247 package

600V 低 VCE(on) 沟槽栅 IGBT 与超快、超软恢复二极管联合封装到TO-247 封装中。 • 低 VCE (on) 沟槽栅 IGBT 技术\n• 低开关损耗\n• 最高结温为 175 °C\n• 5µs 短路 SOA\n• 方形 RBSOA\n• 所有部件都经过 ILM 测试\n• 正 VCE(on) 温度系数\n• 参数分布更紧凑\n• 无铅\n\n优势:\n• 在广泛的应用领域都能发挥高效率\n• 由于 VCE (ON) 低且开关损耗低，所以适合在众多开关频率应用中使用\n• 强健的瞬态性能提升可靠性\n• 并联工作时电流共享表现出色;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 600V 76A TO247AC

Infineon

英飞凌