INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

文件：229.82 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien

文件：92.62 Kbytes 页数：6 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V, TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generatio

文件：327.93 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR

文件：228.48 Kbytes 页数：9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and

文件：134.14 Kbytes 页数：8 Pages

IRF

Ultra Fast Speed IGBT

FEATURES ·Ultrafast Optimizes for high operating frequencies ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Highest efficiency available ·Optimaized for power conversion;UPS,SMPS and welding

文件：358.91 Kbytes 页数：3 Pages

ISC

无锡固电

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.56V@IC=20A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters

文件：375.85 Kbytes 页数：3 Pages

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

文件：229.82 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generation

文件：686.17 Kbytes 页数：11 Pages

IRF