N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and genera

文件：65.22 Kbytes 页数：8 Pages

PHI

PHI

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：102.68 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤14mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

文件：121.07 Kbytes 页数：2 Pages

ISC

无锡固电

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

文件：443.08 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

Advanced Process Technology

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

文件：151.04 Kbytes 页数：8 Pages

SYC

Fast Switching

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 64A@ TC=25℃ • Drain Source Voltage- : VDSS= 55V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) • Fast Switching

文件：856.99 Kbytes 页数：2 Pages

KERSEMI

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：134.29 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：297.48 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：181.89 Kbytes 页数：8 Pages

IRF