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IRFZ48NPBF中文资料PDF规格书
IRFZ48NPBF规格书详情
Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRFZ48NPBF
- 功能描述：
MOSFET MOSFT 55V 64A 14mOhm 54nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
TO-220(TO-220-3) |
6000 |
原装现货正品 |
询价 | ||
Infineon Technologies |
24+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
2020+ |
TO-220 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-220(TO-220-3) |
8800 |
公司只作原装正品 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
2000 |
20年老字号,原装优势长期供货 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-220 |
131316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
IR |
22+ |
TO-220 |
3000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
IR |
23+ |
TO-220 |
13200 |
原厂原装货/代理渠道 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
询价 | ||
IOR |
06+ |
TO-220 |
75 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
