ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes 页数：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes 页数：11 Pages

IRF

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general

恩XP

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

TO-220 MOS FETs 场效应管

GSME

桂微