Single channel high reliability power MOSFETs

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Infineon

英飞凌

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

文件：18.44 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：253.25 Kbytes 页数：6 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：253.25 Kbytes 页数：6 Pages

IRF