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IRFY430M

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRGB430

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRGP430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGP430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRK.430

SUPERMAGN-A-pak-TMPowerModules

Features ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2000V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■Motorstarters ■DCmotorcontrols-ACmotorcontrols ■Unin

IRF

International Rectifier

IRK430

SUPERMAGN-A-PAK??PowerModules

IRF

International Rectifier

ISCNL430W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXDD430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Corporation

详细参数

  • 型号:

    IRFY430CMSCX

  • 制造商:

    International Rectifier

  • 功能描述:

    TRANS MOSFET N-CH 500V 4.5A 3PIN TO-257 - Bulk

供应商型号品牌批号封装库存备注价格
IR
22+
TO-257AA
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-257AA
8000
只做原装现货
询价
IR
23+
TO-257AA
7000
询价
SEMELAB
23+
TO-257AA
89630
当天发货全新原装现货
询价
WSI
CDIP
3647
莱克讯每片来自原厂!价格超越代理!只做进口原装!
询价
IR
2318+
TO-3
4862
只做进口原装!假一赔百!自己库存价优!
询价
IR
18+
TO
85600
保证进口原装可开17%增值税发票
询价
IR
24+
N/A
90000
原厂正规渠道现货、保证原装正品价格合理
询价
IR
24+
45
全新原装
询价
IR
24+
TO-254
300
进口原装正品优势供应
询价
更多IRFY430CMSCX供应商 更新时间2025-5-16 14:00:00