isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

isc N-Channel MOSFET Transistor

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ISC

无锡固电

isc Thyristors

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ISC

无锡固电

Silicon P-Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

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HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with

文件：70.87 Kbytes 页数：6 Pages

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