丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：244.92 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified *

文件：1.11549 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Po

文件：426.56 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes 页数：11 Pages

IRF

采用 D2-Pak 封装的 100V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS;

Infineon

英飞凌