Silicon P-Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件：40.26 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with

文件：70.87 Kbytes 页数：6 Pages

RENESAS

瑞萨

Piezo Audio Indicator

文件：102.27 Kbytes 页数：5 Pages

KINGSTATE

志丰电子

USM PACKAGE

HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. • High Output Current :-500mA.

文件：32.29 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

Power Modules

• Low Profile • 7 Different Circuits to Choose from • Designed for Printed Circuit Board Connections

文件：585.91 Kbytes 页数：4 Pages

crydom