Single N-Channel MOSFET

Features Advanced Trench MOS Technology 100 EAS Guaranteed Green Device Available Super Low Gate Charge Applications Power Tools. UPS Synchronous Rectification in SMPS.

文件：813.55 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：189.59 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：1.44228 Mbytes 页数：11 Pages

KERSEMI

采用 D2-Pak 封装的 75V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard surface-mount power package\n• High-current carrying capability package (upto 195A, die-size;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • Hi

文件：425.92 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：327.29 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：327.29 Kbytes 页数：11 Pages

IRF

ThinkiSemi 85V,92A N-Channel Trench Process Power MOSFETs

文件：1.5573 Mbytes 页数：7 Pages

THINKISEMI

思祁半导体

High Efficiency Synchronous Rectification in SMPS

文件：327.29 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：327.29 Kbytes 页数：11 Pages

IRF