Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR9110, SiHFR9110);

Vishay

威世科技

HEXFET Power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ω, ID = -3.1A

DESCRIPTION\nThird Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.\nThe D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering technique

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：845.12 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

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文件：1.8069 Mbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.37621 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：3.89837 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：3.89222 Mbytes 页数：7 Pages

KERSEMI

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

文件：699.91 Kbytes 页数：4 Pages

Bychip

百域芯

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.37621 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：3.89222 Mbytes 页数：7 Pages

KERSEMI