IRFR9110中文资料HEXFET Power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ω, ID = -3.1A数据手册Infineon规格书
IRFR9110规格书详情
描述 Description
DESCRIPTION
Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9110/SiHFR9110)
• Straight Lead (IRFU9110/SiHFU9110)
• Available in Tape and Reel
• P-Channel
• Fast Switching
技术参数
- 型号：
IRFR9110
- 功能描述：
MOSFET P-Chan 100V 3.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
6900 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VISHAY/威世 |
25+ |
TO-252DPAK |
57488 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR/VISHAY |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
IR |
23+ |
TO-252 |
35890 |
询价 | |||
IR |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
25+ |
PLCC-44 |
18000 |
原厂直接发货进口原装 |
询价 | ||
VISHAY/威世 |
11+ |
TO-252 |
1146 |
询价 | |||
VISHAY/威世 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
VISHAY/威世 |
24+ |
TO-252 |
501746 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
INTERNATIONALRECTIFIER |
23+ |
NA |
1118 |
专做原装正品,假一罚百! |
询价 |
